JPH04598B2 - - Google Patents

Info

Publication number
JPH04598B2
JPH04598B2 JP58178074A JP17807483A JPH04598B2 JP H04598 B2 JPH04598 B2 JP H04598B2 JP 58178074 A JP58178074 A JP 58178074A JP 17807483 A JP17807483 A JP 17807483A JP H04598 B2 JPH04598 B2 JP H04598B2
Authority
JP
Japan
Prior art keywords
electrode layer
lower electrode
layer
silicon
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58178074A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6072261A (ja
Inventor
Hitoshi Hasegawa
Kunihiko Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58178074A priority Critical patent/JPS6072261A/ja
Publication of JPS6072261A publication Critical patent/JPS6072261A/ja
Publication of JPH04598B2 publication Critical patent/JPH04598B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP58178074A 1983-09-28 1983-09-28 半導体装置 Granted JPS6072261A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58178074A JPS6072261A (ja) 1983-09-28 1983-09-28 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58178074A JPS6072261A (ja) 1983-09-28 1983-09-28 半導体装置

Publications (2)

Publication Number Publication Date
JPS6072261A JPS6072261A (ja) 1985-04-24
JPH04598B2 true JPH04598B2 (en]) 1992-01-08

Family

ID=16042159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58178074A Granted JPS6072261A (ja) 1983-09-28 1983-09-28 半導体装置

Country Status (1)

Country Link
JP (1) JPS6072261A (en])

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62136035A (ja) * 1985-12-10 1987-06-19 Fujitsu Ltd 半導体装置の製造方法
JPH01225149A (ja) * 1988-03-04 1989-09-08 Toshiba Corp キャパシタ及びその製造方法
US5087951A (en) * 1988-05-02 1992-02-11 Micron Technology Semiconductor memory device transistor and cell structure
JPH0736438B2 (ja) * 1988-08-25 1995-04-19 日本電気株式会社 半導体装置
KR920004541B1 (ko) * 1989-05-30 1992-06-08 현대전자산업 주식회사 반도체 소자에서 식각베리어층을 사용한 콘택홀 형성방법
JP2673385B2 (ja) * 1989-10-26 1997-11-05 三菱電機株式会社 半導体装置
JP2621609B2 (ja) * 1990-07-31 1997-06-18 日本電気株式会社 電荷蓄積容量を備えた半導体装置及びその製造方法
JPH0496270A (ja) * 1990-08-03 1992-03-27 Sharp Corp 半導体装置の製造方法
JPH04177760A (ja) * 1990-11-09 1992-06-24 Matsushita Electric Ind Co Ltd 半導体記憶装置およびその製造方法
US5283453A (en) * 1992-10-02 1994-02-01 International Business Machines Corporation Trench sidewall structure
KR100269278B1 (ko) * 1992-10-14 2000-10-16 윤종용 강유전체박막을이용한커패시터제조방법
TW241392B (en]) * 1993-04-22 1995-02-21 Ibm
JPH0797008A (ja) * 1993-09-24 1995-04-11 Murata Mach Ltd 物品移載装置
JP2897631B2 (ja) * 1993-12-28 1999-05-31 日本電気株式会社 半導体集積回路装置および製造方法
KR100215867B1 (ko) * 1996-04-12 1999-08-16 구본준 반도체 소자의 커패시터 구조 및 제조 방법
KR20010008432A (ko) * 1998-12-30 2001-02-05 김영환 고유전체 ta２o５막을 갖는 반도체장치의 커패시터 형성방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56147470A (en) * 1980-04-17 1981-11-16 Nec Corp Semiconductor device
JPS57120295A (en) * 1981-01-17 1982-07-27 Mitsubishi Electric Corp Semiconductor memory device
JPS5810852A (ja) * 1981-07-10 1983-01-21 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
JPS6072261A (ja) 1985-04-24

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